A Path to Nanolithography

Abstract

It is yet unclear what type of new devices, if any, will replace the metaloxide field effect transistor in the sub 0.1-μm domain. Since in any case, the development of quantum-effect devices requires smaller and smaller dimensions for operation above temperatures of a few milliKelvin, we can safely assume that high-resolution patterning steps will always be required to manufacture the devices themselves. Alternative approaches (such as the use of self-assembling systems) have not yet reached a convincing level of demonstration. Furthermore we can assume that the complexity of the circuits will continue to increase because this is the true driving force of miniaturization. In order to process large amounts of information in a short amount of time, the processing circuit must be correspondingly complex. Hence the future quantum devices will continue the development pattern of modern electronics, leading to the fabrication of large chips with very small devices—that is, exceedingly large processing power. The apparent insatiability of our appetites for more memory and processing makes this prediction an almost certain evolution of the current technology.