Abstract
Represented here is a continuous-wave (CW) operation laser and a passively Q-switch (PQS) Ho:SSO microchip laser with a Cr2+:ZnSe saturable absorber (SA). An end-pumped Tm:YAP laser pumping was employed, which operated at room temperature. Up to our knowledge, it is the first time to report a PQS microchip Ho:SSO laser. A maximum 418 mW CW laser output was realized with an absorbed pump power of 2.5 W. The slope efficiency was 59.4%. In the PQS mode, the maximum output power was 332 mW, at the same time the slope efficiency was down to 57.1%. The maximum repetition frequency was 0.69 kHz. The maximum pulse energy of 481 μJ was realized corresponding to the pulse width of 103 ns. The pulsed characteristics were studied in this work. The output wavelength for different modes were also investigated.
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