A Parameters Extraction Method For GaAsFET Model Based On An EnhancedSimulated Annealing Algorithm

Abstract

An Enhanced Simulated Annealing, adapted to continuous variables problems, has been previously elaborated. Variables discretization has received special attention and several complementary stopping criteria have been developed and implemented to reduce the computational costs. This method, coupled with an open circuit simulator _SPICE-PAC_ has been used for minimizing objective functions which describe circuit performance optimization problems or component model fitting to experimental data. In the same way synaptic coefficients of analogue multilayer neural networks have been also determined. In the paper, various parameters of a non linear general purpose GaAs FET model are directly determined by our Enhanced Simulated Annealing. This technique minimizes an objective function of several continuous variables _model parameters_ based on the relative and absolute least squares errors between a measured drain current/voltage characteristics data set and computed model responses. The model is described by fairly simple explicit expression and, hence, can be easily implemented in programs of computer aided analysis and design of circuits with GaAs FETs. Our optimization procedure, which does not require heavy and inaccurate derivatives computations, reaches, in a reasonable time, a good accuracy for representing complex GaAs MESFET transistor behaviour. Transactions on Engineering Sciences vol 3, © 1993 WIT Press, www.witpress.com, ISSN 1743-3533 256 Software Applications in Electrical Engineering