Abstract
Block iterative methods are applied to hydrodynamic simulations of a one-dimensional submicrometer semiconductor device. It is shown that block successive underrelaxation (SUR) converges with a fixed relaxation factor omega =0.13 for simulations at 300 K and omega =0.04 at 77 K. To demonstrate the robustness of the block iterative method, numerical simulations of a steady-state electron shock wave in Si at 300 K for a 0.1- mu m channel and at 77 K for a 1.0- mu m channel are presented. The block SUR method is parallelizable if each diagonal block solve can be done efficiently in parallel. Using chaotic relaxation and the preconditioned conjugate gradient method for the parallel diagonal block solves, a parallel speed up of approximately 2.5 is obtained on 10 processors of a Butterfly GP-1000. >
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