Abstract
Quantum confinement in a single silicon dimer row of the Si(001) surface is presented with data obtained by scanning tunneling spectroscopy. The structure to confine surface electrons was made by depositing tungsten atoms on a silicon dimer row from the tip. The tungsten atoms not only scattered electrons, but also modified potential features of silicon dimers close to them, resulting in the reduction of the effective width of the quantum well. Confinement in this structure is, therefore, explained by a parabolic potential well.
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