Abstract
A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm.
Highlights
The p-n junction diode is the building block of integrated circuits and photovoltaic devices
A p-i-n junction diode based on the selected-area doping of the single-walled carbon nanotube (SWNT) network was investigated in this study
Namely S11, S22, and S33, are clearly observed for the pristine SWNT network, which is attributed to the 1D band structure of semiconducting SWNTs
Summary
The p-n junction diode is the building block of integrated circuits and photovoltaic devices. The processes of this device were complex and needed to fabricate the buried metals as the split gate electrode Another structure based on asymmetric metal/nanotube contacts was used to fabricate the diode[4,14,15]. In this device, the SWNT was contacted with high and low work function metal to form the p- and n-type Schottky barrier respectively at the contacts, resulting in built-in electric field in the SWNT. The SWNT was contacted with high and low work function metal to form the p- and n-type Schottky barrier respectively at the contacts, resulting in built-in electric field in the SWNT This kind of diode required an extra gate terminal to realize the best rectification performance. A high-performance diode with a high rectification ratio (~104), large forward current (12.2 μA), and low reverse-saturated current (1.8 nA) was achieved with OA and PEI doping times of 5 h and 18 h, respectively, and a channel length of ~6 μm
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
