A p-channel coupled delta-doped silicon MESFET grown by molecular beam epitaxy

Abstract

Experimental realization of a new p-channel Si MESFET structure, utilizing two boron /spl delta/-doped layers placed in close proximity with one another as the conducting channel, is reported for the first time. This simple homoepitaxially grown Si structure exhibits not only higher sheet carrier density but also higher hole mobility than those of a single /spl delta/-doped layer. The measured transconductance of the device is 1.44 mS/mm at 300 K with a gate length of 5 /spl mu/m, which is a factor of 1.7 higher than the single /spl delta/-doped layer Si MESFET for the same dose in each /spl delta/-doped layer. >