Abstract
A numerical analysis is presented to investigate different base and collector structures on the d.c. and a.c. performance of AlGaAs GaAs multi-finger heterojunction bipolar transistors (HBTs). The simulation is carried out using a two-dimensional device simulator called MEDICI. Five possible structures are studied and compared. The results show that different structures give rise to different electric fields in the base-collector junction and lattice temperatures in the HBT, which consequently affect the HBT's cutoff frequency and current gain, respectively. The physical mechanisms governing these changes are also discussed in detail.
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