Abstract
We calculate the contributions of pure collision and phonon-assisted Auger processes within the framework of the Kane model to the nonradiative lifetime of p-doped GaAs. Our approach employs refined expressions for the wavefunction overlap integrals. Further, in contrast to previous treatments, our theory correctly describes the temperature dependence of the optical phonon-assisted Auger processes. Our values for the Auger lifetimes are in good agreement with experimental results.
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