Abstract
A novel ultra-low power (ULP) low noise amplifier (LNA) is proposed for low-power radio-frequency (RF) wireless radios. Using the differential inductor feedback structure along with the neutralizing capacitor, this configuration doubles the effective gm of the input transistor, while canceling out the feed forward and LO leakage through the gate-drain capacitor. In this design, the input device is biased to operate in moderate inversion region to achieve microwatt power dissipation. Experimental results indicate a power dissipation of 100muW, a noise-figure (NF) of 3.9dB, and a forward gain of 16.8dB. The LNA also exhibits an 1IP3 of -11.2dBm and the input referred -1dB compression point of -21dBm. The circuit was fabricated in Jazz Semiconductor's CMOS 0.18mum process and was powered up using a supply voltage of 1V. For comparison purpose, a ULP common-gate LNA was also designed and fabricated using the same process. Experimental results show that the proposed LNA exhibits higher gain, lower NF, and better linearity
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
