Abstract
A novel type of p+(SiGe)–n−–n+ heterojunction switching power diode with high-speed capability is presented to overcome the drawbacks of existing power diodes. The improvement is achieved by using a p+–n+ mosaic layer as a substitute for the n+ region in the conventional p+(SiGe)–n−–n+ diode to realize an `ideal ohmic' contact for electrons and holes simultaneously. Compared with conventional p+(SiGe)–n−–n+ diodes, the ideal ohmic contact p+(SiGe)–n−–n+ diodes have about one third of the reverse recovery time and a half of peak reverse recovery current. Furthermore, the softness factor increases nearly two times and the leakage current decreases 1–2 orders of magnitude. These improvements are achieved without resorting special process step to lower the carrier lifetime and thus the devices could be easily integrated into power ICs. The Ge percentage content of p+(SiGe) layer is an important parameter for the optimal device design.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
