Abstract
In this work, we propose a novel tunnel oxide based Tunnel FET. This novel Tunnel FET can achieve high drive currents, low SS, low off currents and many other superb device characteristics. From device simulation, this novel device can obtain drive currents 100x higher than that of a conventional Tunnel FET. This novel device also can realize SS as low as 30mV/dec. Moreover, this novel device has potential to significantly reduce off currents, and suppress the ambipolar behavior existing in conventional Tunnel FETs. In addition, the novel device can obtain the ability to scale down without performance degradation due to the unique scalability of tunnel oxide. These excellent device characteristics make the novel Tunnel FET an ideal device structure for future LSTP applications.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
