Abstract
A power MOSFET device structure that has been developed to optimize the tradeoff between ON resistance and switching speed is discussed. The device structure features a trench injector that injects a controlled quantity of minority carriers into the drift path of the MOSFET current to modulate the conductivity of the device during the ON state. The conductivity-modulated MOSFET device (CMDMOS) has been fabricated and characterized. The device structure has demonstrated low ON resistance and high switching speed. It can be implemented along with logic circuitry to allow programmable electrical control of the switching-speed/ON-resistance tradeoff.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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