Abstract
In this letter, we propose a novel trench power MOSFET structure with a p-n junction in trench to reduce the gate charge. We utilize the 2-D device simulator, ATLAS, to investigate the characteristics of the proposed structure and compare with the conventional structure. As a result, the proposed structure exhibits 49.5% enhancement in gate-charge $Q_{\mathrm {\mathbf {g}}}$ as compared with the conventional structure, without degrading the other electrical characteristics.
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