Abstract
A local interconnect (LI) technology utilizing a novel clad TiSi/sub 2/TiN structure has been developed for use in submicron VLSI devices. TiSi/sub 2/ interconnect straps are formed by reaction of a silicon-on-titanium bilayer. A thin TiN layer between the silicide strap and previously salicided regions provides an effective diffusion barrier against counterdoping and substrate silicon outdiffusion. The excellent dry etch selectivity between Si and Ti simplifies the LI patterning process. The new LI structure also offers improved electrical performance over the standard TiN LI because of its lower electrical resistance.
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