A novel technique for RTP annealing of compound semiconductors

Abstract

We introduce for the first time a novel rapid thermal processing (RTP) unit called Zapper™, which has recently been developed by MHI Inc. and the University of Florida, for high temperature thermal processing of semiconductors. This Zapper™ unit is capable of reaching much highertemperatures (>1500°C) than conventional tungsten–halogen lamp RTP equipment and achievinghigh ramp-up and ramp-down rates. We have conducted implant activation annealing studies ofSi +-implanted GaN thin films (with and without an AlN encapsulation layer) using the Zapper™ unit at temperatures up to 1500°C. The electrical property measurements of such annealed samples have led to the conclusion that high annealing temperatures and AlN encapsulation are needed for the optimum activation efficiency of Si + implants in GaN. It has clearly been demonstrated that the Zapper™ unit has tremendous potential for RTP annealing of semiconductor materials, especially for wide band-gap (WBG) compound semiconductors that require very high processing temperatures.