Abstract
The formation of noble-metal silicides on a substrate of silicon single crystals was studied by a novel experimental technique. Halides of metals such as palladium, platinum, and rhodium were deposited as a thin film on the substrate from a liquid organic solution. The halide film was then decomposed by ionic bombardment with ion beams in the 50–500-keV energy range, yielding a surface-metal and metal–silicide layer. The composition and structure of the surface layers were investigated by means of Rutherford-backscattering and x-ray diffraction techniques. The experimental parameters of this ion-beam-plating technique will be discussed. Further, the present results will be compared with those obtained by conventional techniques for metal silicides with respect to consumption of the noble metals and adhesion to the substrate surface.
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