Abstract
AbstractIn this work we study the role of fluorine for the selective suppression of porous silicon in localized SOI applications. The formation of porous silicon can be done selectively by controlling the Fermi level in areas to be etched or not etched, which is typically done by adjusting the level of doping. Implanted fluorine in silicon has demonstrated a donor effect upon annealing at low temperature (600 °C), which is reversible as the fluorine outdiffuses during higher temperature annealing (1100 °C). The investigated technique has been used to form crystalline silicon active regions with thickness less than 200 nm completely surrounded by oxidized porous silicon. The electronic integrity of the active area has also been established through nMOS transistor fabrication and characterization (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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