Abstract
A simple fabrication technique for GaInAsP/InP buried heterostructure lasers has been developed based on a newly observed mass transport phenomenon on chemically etched InP mesas. Threshold currents as low as 9.0 mA have been obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.