Abstract

Surface-wave-sustained discharges are utilized in a non-conventional configuration to yield plasma with a hemispherical shape for diamond film deposition at gas pressures in the range 1–60 Torr. Compared with microwave-sustained plasma balls in “bell jar” reactors, microwave power absorption is more efficient: no power is left that would heat the substrate and, for given power to the reactor and gas conditions, higher power densities are obtained in the plasma. The roughness of the deposit decreases with increasing power density. Deposition rate on 4 cm 2 is typically 350 μg cm −2 h −1 .

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