Abstract
A sulfur passivation method for GaAs, CH 3CSNH 2 treatment has been developed. It is quite effective for removing the surface oxide layer and forming the sulfide passivation layer on GaAs surface, with sulfur atoms bound with Ga and As atoms. After being annealed, a stable sulfur passivation layer is formed. The enhancement of PL intensity reveals the reduction of surface non-radiative recombination and the density of surface states. Moreover, the investigation has been made for the role of S-passivation on interfacial interaction between magnetic overlayer and GaAs. The interdiffusion of As, Ga into overlayer is effectively inhibited, and the magnetization of Fe overlayers is enhanced. In addition, a relationship has been found between the surface chemical structure of the substrates and the magnetic property of overlayers.
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