Abstract
This paper describes an efficient substrate-bias generator (SBG) for low-power and high-speed DRAMs. In this SBG, the charge pumping circuit and driving and supply voltage circuit are newly proposed. The proposed circuit has advantages as follows. First, the charge pumping circuit doesn't suffer from V/sub T/ loss and is applicable to low-voltage DRAMs. Second, the driving and supply voltage switching circuit can supply stable substrate voltage by switching the supply voltage of the driving stage. So, it can reduce the power consumption by making a stable substrate back bias voltage (V/spl dot//sub BB/) because of its high pumping efficiency.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
