Abstract
In this paper, a novel substrate termination technology (STT) for lateral double-diffused MOSFET (LDMOS) based on curved junction extension is proposed and experimentally demonstrated. A low-doped P-substrate, which is inserted in the curved region of the LDMOS, adjusts the high-doped abrupt P-body/N-drift junction with small curvature radius to low-doped P-sub/N-drift junction with large curvature radius, thus reducing peak electric field and avoiding premature avalanche breakdown at the curved abrupt P-body/N-drift junction. The proposed STT has been applied to a super junction (SJ) LDMOS. The experimental results show that the SJ LDMOS with the proposed STT exhibits off-state breakdown voltage (BV) of 800 V, which is the highest BV for the reported SJ LDMOS by far.
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