Abstract
In this letter, a novel /spl beta/-SiC/Si heterojunction backward diode has been developed successfully. The developed new backward diode is somewhat different from a conventional one. The /spl beta/-SiC thin film was grown by a low pressure rapid thermal chemical vapor deposition (LP-RTCVD) using a SiH/sub 4/-C/sub 3/H/sub 8/-H/sub 2/ gas system. Its current-voltage characteristics under different operation temperatures (25-200/spl deg/C) have been measured. In addition, the curvature coefficient /spl gamma/ has also been calculated and it is found to be insensitive to temperature variation up to 180/spl deg/C. The operation temperature is the highest reported thus far, to our knowledge. >
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