A novel spin-polarized transport effect based on double-Schottky barriers

Abstract

We propose and theoretically analyze a spin-polarized transport effect in an n–n semiconductor/ferromagnetic–semiconductor heterojunction. The current–voltage properties of the structure on applying an external magnetic field are analyzed by the double Schottky barrier model. The model shows that the current saturates in both directions, and the reverse saturation currents change with the external magnetic field. In addition, the impact of the exchange energy and the temperature on the currents is also researched in detail. The numerical results point to the plausibility of incorporating spintronic into well-developed semiconductor technology.