A novel SOI MESFET by $$\uppi $$ π -shaped gate for improving the driving current

Abstract

This paper introduces a novel silicon-on-insulator (SOI) metal---semiconductor field-effect transistor (MESFET) with $$\uppi $$ ? -shaped gate with triple workfunction ( $$\uppi $$ ? -SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by 2-D ATLAS international simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated results show that the proposed SOI MESFET has excellent effect on the breakdown voltage and the driving current. The breakdown voltage of the $$\uppi $$ ? -SOI MESFET structure gets 54 % enhancement compared with that of the C-SOI MESFET structure and also the driving current of the $$\uppi $$ ? -SOI MESFET structure gets 66.66 % enhancement compared with that of the C-SOI MESFET structure. Other main characteristics such as maximum output power density, maximum oscillation frequency and maximum available gain have been evaluated and improved in the proposed structure.