Abstract
A new SOI self-balance (SB) super-junction (SJ) pLDMOS with a self-adaptive charge (SAC) layer and its physical model are presented. The SB is an effective way to realize charges balance (CB). The substrate-assisted depletion (SAD) effect of the lateral SJ is eliminated by the self-adaptive inversion electrons provided by the SAC. At the same time, high concentration dynamic self-adaptive electrons effectively enhance the electric field (EI) of the dielectric buried layer and increase breakdown voltage (BV). EI = 600 V/μm and BV = −237 V are obtained by 3D simulation on a 0.375-μm-thick dielectric layer and a 2.5-μm-thick top silicon layer. The optimized structure realizes the specific on resistance (Ron,sp) of 0.01319 Ω·cm2, FOM (FOM = BV2/Ron,sp) of 4.26 MW/cm2 under a 11 μm length (Ld) drift region.
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