Abstract
In this paper, we present a method allowing industrial production of integrated ion sensitive field effect transistor (ISFET) sensor. An ASIC CMOS standard process is used to integrate the sensor and signal processing circuit; then the sensor is plated with the sensing membrane (SnO 2) by sputtering. The structure of the ISFET is novel SnO 2/Al discrete gate. The discrete gate ISFET and the readout circuit were fabricated with a conventional standard CMOS IC process where no extra mask was required. The experimental data show that the SnO 2/Al discrete gate ISFET sensors have a high linearity of 58 mV/pH in a concentration ranging from pH 2 to 10. The low offset and low power readout circuit for the discrete gate ISFETs pH sensor was designed and evaluated for monolithic in this study.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
