Abstract

Ultrasound assisted processes are emerging as a promising route to replace the conventional methods for the unit operations and unit processes of chemical engineering. Typically the conventional methods for the synthesis of nano size metal oxides, metal carbides and metal nitrides are multiple step processes of longer duration requiring many chemicals and conducted at higher temperature. Hence there is need for a simple, single step and environmentally benign process for the synthesis of these materials. A novel single step ultrasound assisted process at room temperature using simple and non -toxic precursors have been develop for the facile synthesis of Silicon Carbide (SiC), Silicon nitride (Si3N4) and Titanium Carbide (TiC). Ultrasonic frequency 20 kHz was used for 60 min. Samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Zetasizer and Brunauer–Emmett–Teller (BET) surface area analyzer. All the synthesized samples were having particle sizes less than 200 nm. This process could be considered as general process for the ultrasound assisted synthesis of metallic compound of industrial importance.

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