Abstract
This paper proposes a novel MOSFET design using a single mask. The proposed design, referred to as Pit and Pitch (PP), uses a single lithography step to “pit” layers of material and a series of angled implantations and depositions (the “pitch”) to build a vertically oriented MOSFET. Both n-channel and p-channel devices are simulated using Silvaco Athena and Atlas software and then compared to conventional MOSFETS of a similar lithographic node and evaluated on performance, economic and scaling possibilities. The results show that the PP MOSFET has very comparable performance to similarly sized MOSFETs and offers a large potential to reduce lithography costs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
