Abstract
A novel single gate MOS controlled current saturation thyristor (MCST) device is proposed. In the on-state the MCST operates in thyristor-like mode at low anode voltage and enters the IGBT-like mode automatically with increasing anode voltage, offering a low on-state voltage drop and current saturation capability. Simulation results based on 6.5 kV trench devices indicate the turn-off energy loss of the MCST is reduced by over 35% compared to the IGBT. The saturation current density of the MCST is strongly dependent on the on-set voltage of the p/sup +/ buffer/n-well junction, leading to its excellent safe operation area (SOA) and making it suitable for high power applications.
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