Abstract
A novel termination structure for silicon microstrip detectors is proposed, featuring all p-type multiguard and scribe-line implants, as well as inward metal field-plates providing almost complete coverage of the passivation-oxide external surface. The structure is intended for detector long-term stability improvement and fabrication-process simplification. Proper design of the multiguard layout enables a very stable behavior at relatively high bias voltages to be achieved both prior and after 1/spl times/10/sup 12/ cm/sup -2/ neutron irradiation.
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