A novel shaped-controlled fabrication of nanopore and its applications in quantum electronics

Chien-Han Chen,Cen-Shawn Wu,Xuyan Chang

doi:10.1038/s41598-019-55190-y

Chien-Han Chen, Cen-Shawn Wu + Show 1 more

Open Access

https://doi.org/10.1038/s41598-019-55190-y

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Journal: Scientific Reports	Publication Date: Dec 1, 2019
Citations: 13	License type: open-access

Affiliation: National Changhua University of Education

Abstract

High-intensity (107–108 A m−2) electron beams can be used to fabricate nanoscale pores. This approach enables real-time observation of nanopore drilling and precise control of the diameter of the nanopore. Nevertheless, it is not suitable for tuning the nanopore’s sidewall shape. In this study, we demonstrate the use of low-intensity electron beams to fabricate nanopores on a silicon nitride (SiNx) membrane. This technique allows the precise adjustment of the nanopore dimension and the shaping of its three-dimensional (3D) nanostructure. The 3D structures of the nanopore were evaluated by electron tomography, and series of oblique images were used in reconstructing the 3D images of nanopores using a weighted back-projection method. The sidewall shape of the nanopore was observed at different electron-beam conditions, and the formation mechanism was elucidated based on these results. The nanopore fabricated with this technique can be used as a template to develop electronics at the nanoscale based on which a quantum-dot device can be prepared with a simple evaporation process. The measured results show that the device can resolve well-defined electronic states that are characteristic for the behaviors of the quantum-dot device.

Highlights

High-intensity (107–108 A m−2) electron beams can be used to fabricate nanoscale pores
We used a low-intensity electron beam to create nanopores on a SiNx membrane. This technique allows the precise adjustment of the nanopore dimensions, and creates its three-dimensional (3D) shape
The growth of low-stress amorphous silicon nitride membranes was carried out using the low-pressure chemical-vapor-deposition (LPCVD) method on a substrate with a thickness of 500 μm at a temperature of 780 °C immersed in ammonia and exposed to dichlorosilane gases

Summary

Introduction

High-intensity (107–108 A m−2) electron beams can be used to fabricate nanoscale pores. We used a low-intensity electron beam to create nanopores on a SiNx membrane. Transmission electron microscopy (TEM) image of a nanopore with a diameter of ~15 nm in SiNx membranes with thicknesses of 75 nm.

Results

Conclusion