Abstract
In this brief, an advanced sensing scheme for ultrathin-body vertical Flash memory device is introduced experimentally. Without an increment in the number of read operations, the program/erase states of a memory cell can be identified exactly even with the existence of electrical interference between cells having an ultrathin vertical channel in common. The novel sensing scheme, i.e., the double sensing per 2 bits method, was validated for a fabricated device with a channel thickness of 80 nm. The proposed method can be also used as reference for establishing a smart sensing scheme for multilevel cell NAND Flash memory devices.
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