Abstract
A novel NO gas sensor workable at room temperature was proposed and discussed the response mechanism. It is based on a Si diode structure consisting of Pd–Pt/WO 3/p-Si/Al. WO 3 film was deposited by reactive sputtering and crystallized by thermal annealing. The gas detection was carried out by measuring vertical direction current between Pt–Pd electrode and Al ohmic contact. The sensor showed sensitivity to NO gas at the concentration lower than 50 ppm at room temperature. The 90% response time was less than 3 min and good reversibility was observed without the shift of the base level current. This sensor may lead to the development of integrated sensors on a single Si chip.
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