Abstract
Directly accessible, ultralong, uniform platinum silicide nanowires in PtSi and Pt 2Si are mass-fabricated by combining a sidewall transfer lithography (STL) technology and a self-aligned silicide process. The STL technology is based on standard Si technology. The self-aligned platinum silicide (PtSi x ) process consists of two sequential steps in a single run: a silicidation step in N 2 to ensure a controllable silicide formation followed by an oxidation step in O 2 to form a reliable protective SiO x layer on top of the grown PtSi x . The achieved nanowires are characterised by a low resistivity: 26 ± 3 and 34 ± 2 μΩ cm for the Pt 2Si- and PtSi-dominated nanowires.
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