A Novel RF LDMOS Fabricated With Standard Foundry Technology

Abstract

In this letter, a novel LDMOS structure is proposed and experimentally demonstrated with standard foundry CMOS technology. The device features both an inserted oxide layer in the drift region as the ldquoelectric field line absorberrdquo and a high-doped region introduced for action of the RESURF-like structure. The RESURF-Dielectric-region-Inserted LDMOS device with breakdown voltage of about 15 V and peak cutoff frequency of 18 GHz is obtained. The proposed device also exhibits good reliability behavior under high-voltage stressing. The new device is very promising for integrated power amplifier circuit design with the standard CMOS process.