Abstract
A novel, environmentally friendly process is successfully applied for the removal of photoresist and organic post-etch residues from silicon surfaces. The moist ozone gasphase process described, greatly increases the organic removal efficiency. Improved performance over traditional processes is due to enhanced reactive ozone availability near the wafer surface. Additionally, OH radical scavengers such as acetic acid chemically enhance the process efficiency even further.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
