A novel red-emitting InScW3O12:Eu3+ phosphor with anti-thermal-quenching performance for high-power WLED applications

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A series of red-emitting InScW3O12:Eu3+ (ISWO:Eu3+) phosphors with anti-thermal-quenching performance were successfully synthesized by conventional solid-state reaction. The phase structure and luminescent properties of ISWO:Eu3+ were systematically studied. The photoluminescence excitation (PLE) spectrum showed that ISWO:Eu3+ phosphor can be effectively matched with commercial ultraviolet (UV), violet and blue light chips. The main emission peak of the phosphor was located at 613 nm, which was attributed to the electric dipole transition 5D0 → 7F2. Under the optimal excitation, the prepared ISWO:0.08Eu3+ phosphor showed excellent anti-thermal-quenching performance, its photoluminescence (PL) intensity at 180 °C reached 157.4 % of initial intensity at room temperature. At 465 nm excitation, it also exhibited the anti-thermal-quenching property and the PL intensity remained 115.1 % at 150 °C of that at room temperature. In situ XRD analysis revealed that the lattice contraction resulting in an increase in structural rigidity as the temperature rising, which caused the change of Eu3+ local environment and improved the PL intensity. Finally, a series of warm white LED devices under varying power density conditions with stable output were prepared using the red ISWO:0.08Eu3+ phosphor, indicating that the ISWO:Eu3+ phosphor with excellent anti-thermal-quenching performance has potential application prospects in high-power white light-emitting diodes (WLEDs).