Abstract
This paper presents a novel rectifier with a considerably expanded operating input power range for wireless power transmission (WPT) applications. By utilizing a depletion-mode metal-oxide-semiconductor field-effect transistor (MOSFET), the diode's breakdown voltage can be enlarged while preserving the same threshold voltage. Therefore, compared with traditional rectifiers, this proposed rectifier can perform a high RF-to-dc power conversion efficiency (PCE) in a much wider input power range. The rectifier's performance has been proved by measurement results, which show that a PCE above 50% can be achieved over the input power range from −13.5 to 16.7 dBm.
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