A novel quad source/drain metal nanocrystal memory device for multibit-per-cell storage

Zengtao Liu Zengtao Liu,V Narayanan,G Pei,Chungho Lee Chungho Lee,E.C Kan

doi:10.1109/led.2003.812528

A novel quad source/drain metal nanocrystal memory device for multibit-per-cell storage

Zengtao Liu Zengtao Liu, V Narayanan + Show 3 more

https://doi.org/10.1109/led.2003.812528

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Journal: IEEE Electron Device Letters	Publication Date: May 1, 2003
Citations: 26

Affiliation: Cornell University, Advanced Micro Devices (United States)

#Metal Nanocrystal Memories #Storage Bits + Show 8 more

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Abstract

Based on the 2-bit-per-cell metal nanocrystal memories, a novel quad source/drain device capable of 4 bits per cell data storage is demonstrated. Along with the new device structure, a reliable parallel read scheme with low V/sub DS/ is also proposed and verified for 4-bit-per-cell operations. The proposed read scheme requires 1.125 read operations on average to read out the 4 bits stored in a cell, while minimizing the read disturb and interference between the different storage bits.

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