Abstract

Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when the program suspend command is issued during the program stage, and particularly, they become more obvious as the delay time between program suspend operation and other following operations exceeds tens of milliseconds. By analyzing the waveform of conventional program suspend scheme, it is suggested that the unexpected extra read fail bits are caused by the different occupancy of grain boundary traps (GBTs) in the polycrystalline silicon (poly-Si) channel during the idle time after the program suspend operation. Accordingly, a novel program suspend scheme is proposed by adding a “stabilizing” pulse immediately after the program stage. Silicon experimental data show that the proposed scheme can effectively limit the read fail bit count (FBC) to a normal range, thus improving the reliability of 3D NAND flash memory significantly.

Highlights

  • OVER the past decade, the demand for NAND flash memory in mobile devices and solid state drives (SSDs) has grown rapidly [1], owing to its unprecedented advantages of low cost and large capacity

  • Before introducing conventional program suspend scheme, an example for a block structure of 3D NAND flash is shown in Fig. 1(a), where M strings are shared by one bitline

  • In work [20], it has been reported that the channel potential after the verify stage is more negative, which means when the program suspend command is issued during the program stage, the grain boundary traps (GBTs) detrapping influence should be more than during the verify stage, in line with our experimental results

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Summary

A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash

Abstract—Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory These extra read fail bits are observed when the program suspend command is issued during the program stage, and they become more obvious as the delay time between program suspend operation and other following operations exceeds tens of milliseconds.

INTRODUCTION
PROGRAM SUSPEND AND RESUME INTRODUCTION
Experiment of Read during Program Suspend Operation
Mechanism Analysis and Proposed Program Suspend Scheme
CONCLUSION
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