Abstract
This paper presents a novel post-CMP cleaning process using the boron-doped diamond (BDD) film electrode as anode in the electrochemical cleaning combined with non-ionic surfactant. With wide potential window and high oxygen evolution potential compared with other electrode materials, the BDD film electrode is able to electrochemically generate super-advanced oxidation free radicals, such as hydroxyl radicals, oxygen free radicals and so on, the sub-product of which are ozone and hydrogen peroxide. And the BDD film electrode electrochemically oxidation is an advanced oxidation technology. Using the surfactant to remove particles contaminants in the first step, the novel post-CMP cleaning process can effectively remove organic as well as the adsorbed surfactant on the surface. The experiments of cleaning Silicon wafer in point are introduced in this paper, and the results indicated that the effective cleaning process can meet the continuous development of microelectronic industry cleaning needs.
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