Abstract
AbstractA novel positive resist was prepared by sensitizing poly(p‐trimethylsilyloxystyrene) with p‐nitro‐benzyl‐9, 10‐diethoxyanthracene‐2‐sulfonate (NBAS) which was found to be a deep UV bleachable acid precursor. The silylated polymer is converted to alkaline soluble poly(p‐hydroxy‐styrene) in the presence of acid and a small amount of water. The photoresist gives high resolution positive patterns on imagewise exposure with deep UV light with a sensitivity of 15 mJ/cm2.
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