Abstract
A novel structure of barrier controlled tunnel FET is proposed in the paper. The principles of gate work function engineering and channel doping engineering are combined to form up an in channel potential barrier, which can tune the source to drain tunnel current. The proposed structure serves as an alternative solution of barrier controlled tunnel FET fabrication, which combines the merits of the barrier controlled traditional MOSFET device and the bandgap controlled tunnel device. With carbon nanotube as the channel material, the device performance of the novel structure is verified using numerical simulation under the non-equilibrium Green’s function framework.
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