Abstract
A miniature piezoresistive pressure sensor fabricated by temporary bonding technology was reported in this paper. The sensing membrane was formed on the device layer of an SOI (Silicon-On-Insulator) wafer, which was bonded to borosilicate glass (Borofloat 33, BF33) wafer for supporting before releasing with Cu-Cu bonding after boron doping and electrode patterning. The handle layer was bonded to another BF33 wafer after thinning and etching. Finally, the substrate BF33 wafer was thinned by chemical mechanical polishing (CMP) to reduce the total device thickness. The copper temporary bonding layer was removed by acid solution after dicing to release the sensing membrane. The chip area of the fabricated pressure sensor was of 1600 μm × 650 μm × 104 μm, and the size of a sensing membrane was of 100 μm × 100 μm × 2 μm. A higher sensitivity of 36 μV/(V∙kPa) in the range of 0–180 kPa was obtained. By further reducing the width, the fabricated miniature pressure sensor could be easily mounted in a medical catheter for the blood pressure measurement.
Highlights
IntroductionDue to lower power consumption, higher integration level and the ability for small point/space limited measurement, miniature pressure sensors are widely used in industrial/aerospace/
Due to lower power consumption, higher integration level and the ability for small point/space limited measurement, miniature pressure sensors are widely used in industrial/aerospace/medical/consumer electronics fields
In order to achieve high sensitivity and small size for the piezoresistive pressure sensors, there have been lots of studies focused on the design, simulation and the manufacturing technology have been performed [6,7]
Summary
Due to lower power consumption, higher integration level and the ability for small point/space limited measurement, miniature pressure sensors are widely used in industrial/aerospace/. These small pressure sensors on the skin of the airfoil can obtain the speed and angle to control flight altitude in the aircraft systems. In order to achieve high sensitivity and small size for the piezoresistive pressure sensors, there have been lots of studies focused on the design, simulation and the manufacturing technology have been performed [6,7]. Optimized the design of the flat pressure sensor by adjusting the doping concentration of piezoresistive material and the thickness of the diaphragm. A miniature piezoresistive pressure sensor fabrication process based on temporary bonding technology was proposed, which ensures that the thickness of the device can be as small as 100 μm without the fragmentation. A half-bridge pressure sensor was designed and fabricated
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