A novel p-GaN HEMT with AlInN/AlN/GaN double heterostructure and InAlGaN back-barrier

Abstract

In this paper, a novel p-type gallium nitride (p-GaN) high electron mobility transistor (HEMT) is proposed and investigated for high power electronics applications. In the proposed device, an AlInN/AlN/GaN double heterostructure has been used. In addition, InAlGaN back-barrier has also been employed to improve the DC performance of the device. The double AlInN/GaN heterostructures offer low resistance, resulting to a high two-dimensional electron gas (2DEG) density. As a result the current drive efficiency of the device is significantly improved. On the other hand, an inserted InAlGaN back-barrier confines the electrons in the channel which further enhances the performance of the device. To validate the simulation results, calibration of the device models has been performed with experimental results. Results show that the proposed device exhibits low on-resistance (Ron), high drain current (Ids) and high transconductance (gm) as compared to the state-of-the-art devices. Also, the processing steps have been proposed for the possible fabrication of the proposed device. Finally, the optimization of the device design parameter is performed to achieve the optimal device performance with respect to Ron.