Abstract
A novel type of memory based on self-organized quantum dots (QDs) is presented, which merges the advantages of the most important semiconductor memories, the dynamic random access memory (DRAM) and the Flash. A nonvolatile memory with fast access times (<10ns) and good endurance (>1015 write/erase cycles) as an ultimate solution seems possible. A storage time of 1.6s at 300K in InAs/GaAs QDs with an additional Al0.9Ga0.1As barrier is demonstrated and a retention time of 106 years is predicted for GaSb QDs in an AlAs matrix. A minimum write time of 6ns is obtained for InAs/GaAs QDs. This value is already in the order of the access time of a DRAM cell and at the moment limited by the RC low pass of the device. An erase time of milliseconds is shown in first measurements on GaSb/GaAs QDs at 100K. Faster write/erase times below 1ns even at room temperature are expected for improved device structures.
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