Abstract
This paper reports a novel MOS dosimeter with a very thick and defect-rich oxide layer fabricated by MEMS technology. We combined deep-reactive-ion etching (DRIE), thermal oxidation and LPCVD to prepare an oxide layer of 5µm containing multiple and large interfaces. Our devices were irradiated by γ-rays of 60Co at 2Gy per minute for 2hrs and thermally stimulated current (TSC) method was used to determine the readout of dosimeters. Results show that there is a peak current about 450nA, indicating a total TSC charge of 158µC and sensitivity of 5.5nC/mm2·Gy, which is 40 times the sensitivity of previous MOS dosimeters.
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