Abstract
A modulation of coupling efficiency of spontaneous emission is proposed theoretically to result in an ultrawideband modulation of spontaneous output intensity in semiconductor light-emitting devices with quantum microcavities. The proposed modulation scheme does not involve changes in carrier population, but relies purely on the modulation of the coupling efficiency of spontaneous emission caused by electric-field-induced tuning of emission wavelength. An extremely wideband modulation is predicted, showing a cutoff frequency over 10/sup 11/ Hz and being completely free of recombination lifetime limitation. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
